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| BCR8KM-12LB Triac Medium Power Use REJ03G0319-0100 Rev.1.00 Aug.20.2004 Features * * * * * IT (RMS) : 8 A VDRM : 600 V IFGTI , IRGTI, IRGT : 30 mA (20 mA)Note5 Viso : 2000 V The product guaranteed maximum junction temperature 150C. * Insulated Type * Planar Passivation Type * Refer to the recommended circuit values around the triac before using. Outline TO-220FN 2 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 3 1 1 23 Applications Switching mode power supply, washing machine, motor control, heater control, and other general purpose control applications Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Symbol VDRM VDSM Voltage class 12 600 720 Unit V V Rev.1.00, Aug.20.2004, page 1 of 7 BCR8KM-12LB Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Isolation voltage Notes: 1. Gate open. Symbol IT (RMS) ITSM I2 t PGM PG (AV) VGM IGM Tj Tstg -- Viso Ratings 8 80 26 5 0.5 10 2 - 40 to +150 - 40 to +150 2.0 2000 Unit A A A2s W W V A C C g V Conditions Commercial frequency, sine full wave 360 conduction, Tc = 114C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Ta = 25C, AC 1 minute, T1*T2*G terminal to case Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Gate trigger voltageNote2 Symbol IDRM VTM VFGT VRGT VRGT IFGT IRGT IRGT VGD Rth (j-c) (dv/dt)c Min. -- -- -- -- -- -- -- -- 0.2/0.1 -- 10/1 Typ. -- -- -- -- -- -- -- -- -- -- -- Max. 2.0 1.6 1.5 1.5 1.5 30Note5 30Note5 30Note5 -- 3.6 -- Unit mA V V V V mA mA mA V C/W V/s Test conditions Tj = 150C, VDRM applied Tc = 25C, ITM = 12 A, Instantaneous measurement Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Gate trigger currentNote2 Gate non-trigger voltage Tj = 125C/150C, VD = 1/2 VDRM Thermal resistance Junction to caseNote3 Critical-rate of rise of off-state Tj = 125C/150C commutating voltageNote4 Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. 5. High sensitivity (IGT 20 mA) is also available. (IGT item: 1) Test conditions 1. Junction temperature Tj = 125C/150C 2. Rate of decay of on-state commutating current (di/dt)c = - 4 A/ms 3. Peak off-state voltage VD = 400 V Commutating voltage and current waveforms (inductive load) Supply Voltage Time (di/dt)c Time Time VD Main Current Main Voltage (dv/dt)c Rev.1.00, Aug.20.2004, page 2 of 7 BCR8KM-12LB Performance Curves Maximum On-State Characteristics 102 7 5 100 Rated Surge On-State Current Surge On-State Current (A) 90 80 70 60 50 40 30 20 10 00 10 23 5 7 10 1 On-State Current (A) 3 2 101 7 5 3 2 Tj = 150C 100 7 5 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Tj = 25C 23 5 7 10 2 On-State Voltage (V) Conduction Time (Cycles at 60Hz) Gate Trigger Current (Tj = tC) x 100 (%) Gate Trigger Current (Tj = 25C) Gate Characteristics (I, II and III) 3 2 VGM = 10V Gate Trigger Current vs. Junction Temperature 103 7 5 3 2 IRGT III Typical Example Gate Voltage (V) 10 7 5 3 VGT = 1.5V 2 100 7 5 3 2 10 -1 1 PG(AV) = 0.5W PGM = 5W IGM = 2A 102 I ,I 7 FGT I RGT I 5 3 2 101 -60 -40-20 0 20 40 60 80 100 120 140 160 7 IFGT I IRGT I, IRGT III VGD = 0.1V 5 101 2 3 5 7102 2 3 5 7103 2 3 5 7104 Gate Current (mA) Junction Temperature (C) Gate Trigger Voltage (Tj = tC) x 100 (%) Gate Trigger Voltage (Tj = 25C) Gate Trigger Voltage vs. Junction Temperature 10 7 5 3 2 102 7 5 3 2 10 -60 -40-20 0 20 40 60 80 100 120 140 160 1 3 Maximum Transient Thermal Impedance Characteristics (Junction to case) Transient Thermal Impedance (C/W) 102 2 3 5 7 103 2 3 5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Typical Example Junction Temperature (C) Conduction Time (Cycles at 60Hz) Rev.1.00, Aug.20.2004, page 3 of 7 BCR8KM-12LB Maximum Transient Thermal Impedance Characteristics (Junction to ambient) Maximum On-State Power Dissipation 16 Transient Thermal Impedance (C/W) 10 7 5 3 2 2 10 7 5 3 2 1 10 7 5 3 2 0 10 7 5 3 2 -1 10 1 3 On-State Power Dissipation (W) No Fins 14 12 360 Conduction Resistive, 10 inductive loads 8 6 4 2 0 2 4 6 8 10 12 14 16 10 2 3 5 7102 2 3 5 7103 2 3 5 7104 2 3 5 7105 Conduction Time (Cycles at 60Hz) RMS On-State Current (A) Allowable Case Temperature vs. RMS On-State Current 160 Curves apply regardless of conduction angle Allowable Ambient Temperature vs. RMS On-State Current 160 All fins are black painted aluminum and greased 120 x 120 x t2.3 100 x 100 x t2.3 60 x 60 x t2.3 120 100 80 60 40 20 0 0 2 4 6 8 360 Conduction Resistive, inductive loads Ambient Temperature (C) Case Temperature (C) 140 140 120 100 80 60 40 20 0 0 2 4 Curves apply regardless of conduction angle Resistive, inductive loads Natural convection 10 12 14 16 6 8 10 12 14 16 RMS On-State Current (A) RMS On-State Current (A) Repetitive Peak Off-State Current (Tj = tC) x 100 (%) Repetitive Peak Off-State Current (Tj = 25C) Allowable Ambient Temperature vs. RMS On-State Current 160 Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads Repetitive Peak Off-State Current vs. Junction Temperature 10 7 5 3 2 5 10 7 5 3 2 4 10 7 5 3 2 3 10 7 5 3 2 2 10 6 Typical Example Ambient Temperature (C) 140 120 100 80 60 40 20 0 0 0.5 1.0 1.5 2.0 2.5 3.0 -60 -40-20 0 20 40 60 80 100 120 140 160 RMS On-State Current (A) Junction Temperature (C) Rev.1.00, Aug.20.2004, page 4 of 7 BCR8KM-12LB Holding Current vs. Junction Temperature Holding Current (Tj = tC) x 100 (%) Holding Current (Tj = 25C) 103 7 5 4 3 2 Latching Current vs. Junction Temperature 10 7 5 3 2 10 7 5 3 2 1 2 3 Typical Example Latching Current (mA) Distribution T2+, G- Typical Example 102 7 5 4 3 2 101 -60 -40 -20 0 20 40 60 80 100 120140 160 10 7 5 3 T2+, G+ 2 T -, G- Typical Example 2 100 -40 0 40 80 120 160 Junction Temperature (C) Junction Temperature (C) Breakover Voltage (dv/dt = xV/s) x 100 (%) Breakover Voltage (dv/dt = 1V/s) Breakover Voltage vs. Junction Temperature Breakover Voltage (Tj = tC) x 100 (%) Breakover Voltage (Tj = 25C) 160 140 120 100 80 60 40 20 0 -60 -40-20 0 20 40 60 80 100 120 140 160 Typical Example Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=125C) 160 140 120 100 80 60 40 20 I Quadrant III Quadrant Typical Example Tj = 125C 01 2 3 4 10 2 3 5 710 2 3 5 710 2 3 5 710 Junction Temperature (C) Rate of Rise of Off-State Voltage (V/s) Breakover Voltage (dv/dt = xV/s) x 100 (%) Breakover Voltage (dv/dt = 1V/s) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=150C) 160 140 120 100 80 60 40 20 I Quadrant III Quadrant Commutation Characteristics (Tj=125C) Critical Rate of Rise of Off-State Commutating Voltage (V/s) 7 5 3 2 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT Time Typical Example Tj = 150C 101 7 Minimum 5 Characteristics Value Typical Example Tj = 125C IT = 4A = 500s VD = 200V f = 3Hz I Quadrant 3 2 10 70 10 0 III Quadrant 1 2 01 10 2 3 5 7102 2 3 5 7103 2 3 5 7104 23 5 7 10 23 5 7 10 Rate of Rise of Off-State Voltage (V/s) Rate of Decay of On-State Commutating Current (A/ms) Rev.1.00, Aug.20.2004, page 5 of 7 BCR8KM-12LB Gate Trigger Current vs. Gate Current Pulse Width Commutation Characteristics (Tj=150C) Critical Rate of Rise of Off-State Commutating Voltage (V/s) 7 5 3 2 101 7 5 3 2 Gate Trigger Current (tw) x 100 (%) Gate Trigger Current (DC) Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT Time Typical Example Tj = 150C IT = 4A = 500s VD = 200V f = 3Hz 10 7 5 3 2 102 7 5 3 2 101 0 10 3 Typical Example IFGT I IRGT I IRGT III III Quadrant I Quadrant Minimum Characteristics Value 10 70 10 0 23 5 7 101 23 5 7 102 23 5 7 10 1 23 5 7 10 2 Rate of Decay of On-State Commutating Current (A/ms) Gate Current Pulse Width (s) Gate Trigger Characteristics Test Circuits 6 6 Recommended Circuit Values Around The Triac Load C1 6V V A 330 6V V A 330 R1 C0 R0 Test Procedure I 6 Test Procedure II C1 = 0.1 to 0.47F C0 = 0.1F R0 = 100 R1 = 47 to 100 6V V A 330 Test Procedure III Rev.1.00, Aug.20.2004, page 6 of 7 BCR8KM-12LB Package Dimensions TO-220FN EIAJ Package Code JEDEC Code Mass (g) (reference value) 2.0 Lead Material Cu alloy 10 0.3 2.8 0.2 15 0.3 3 0.3 3.2 0.2 14 0.5 3.6 0.3 1.1 0.2 1.1 0.2 0.75 0.15 6.5 0.3 0.75 0.15 2.54 0.25 2.54 0.25 4.5 0.2 Symbol A A1 A2 b D E e x y y1 ZD ZE Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified. Order Code Lead form Standard packing Quantity Standard order code Standard order code example BCR8KM-12LB BCR8KM-12LB-A8 Straight type Plastic Magazine (Tube) 50 Type name Lead form Plastic Magazine (Tube) 50 Type name - Lead forming code Note : Please confirm the specification about the shipping in detail. Rev.1.00, Aug.20.2004, page 7 of 7 2.6 0.2 Dimension in Millimeters Min Typ Max Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. RENESAS SALES OFFICES Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500 Fax: <1> (408) 382-7501 Renesas Technology Europe Limited. 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